BPW14N telefunken semiconductors rev. a2, 15-jul-96 1 (6) silicon npn phototransistor description BPW14N is a high speed silicon npn epitaxial planar phototransistor in a standard to18 hermetically sealed metal case. its glass lens, featuring a viewing angle of 12 makes it insensible to ambient straylight. a base terminal is avail- able to enable biasing and sensitivity control. features hermetically sealed case lens window narrow viewing angle j = 10 exact central chip alignment base terminal available high photo sensitivity fast response times suitable for visible and near infrared radiation selected into sensitivity groups 94 8486 applications detector in electronic control and drive circuits absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit collector base voltage v cbo 32 v collector emitter voltage v ceo 32 v emitter base voltage v ebo 5 v collector current i c 50 ma peak collector current t p /t = 0.5, t p 10 ms i cm 100 ma total power dissipation t amb 25 c p tot 310 mw junction temperature t j 150 c storage temperature range t stg 55...+150 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient r thja 400 k/w thermal resistance junction/case r thjc 150 k/w
BPW14N telefunken semiconductors rev. a2, 15-jul-96 2 (6) basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 32 v collector dark current v ce = 20 v, e = 0 i ceo 1 100 na collector emitter capacitance v ce = 5 v, f = 1 mhz, e=0 c ceo 5.7 pf collector base capacitance v cb = 5 v, f = 1 mhz, e=0 c cbo 6.5 pf angle of half sensitivity j 10 deg wavelength of peak sensitivity p 780 nm range of spectral bandwidth 0.5 520...950 nm collector emitter saturation voltage i c = 1 ma, i b = 100 a v cesat 0.3 v turnon time v s =5v, i c =5ma, r l =100 t on 3.2 s turnoff time v s =5v, i c =5ma, r l =100 t off 2.7 s cutoff frequency v s =5v, i c =5ma, r l =100 f c 170 khz type dedicated characteristics t amb = 25 c parameter test conditions type symbol min typ max unit collector light current e e =1mw/cm 2 , BPW14Nb i ca 1.0 1.5 2.0 ma g e , =950nm, v ce =5v BPW14Nc i ca 1.7 3.0 ma
BPW14N telefunken semiconductors rev. a2, 15-jul-96 3 (6) typical characteristics (t amb = 25 c unless otherwise specified) 0 25 50 75 100 0 200 400 800 150 94 8329 600 125 t amb ambient temperature ( c ) p total power dissipation ( mw ) tot r thjc r thja figure 1. total power dissipation vs. ambient temperature 94 8330 20 i collector dark current ( na ) ceo t amb ambient temperature ( c ) 10 0 10 1 10 2 10 3 10 4 10 6 10 5 150 50 100 v ce =20v figure 2. collector dark current vs. ambient temperature 94 8331 0 50 100 150 t amb ambient temperature ( c ) 0 0.5 1.0 1.5 2.0 3.5 i relative collector current ca rel 2.5 3.0 v ce =5v e e =1mw/cm 2 =950nm figure 3. relative collector current vs. ambient temperature 0.01 0.1 1 0.01 0.1 1 10 i collector light current ( ma ) ca e e irradiance ( mw / cm 2 ) 10 94 8339 v ce =5v =950nm bpw 14 nb bpw 14 nc figure 4. collector light current vs. irradiance 0.1 1 10 0.1 1 10 i collector light current ( ma ) ca v ce collector emitter voltage ( v ) 100 94 8340 e e =1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 =950nm bpw 14 nb figure 5. collector light current vs. collector emitter voltage 0.1 1 10 0 4 8 12 16 20 c collector emitter capacitance ( pf ) ceo v ce collector emitter voltage ( v ) 100 94 8335 f=1mhz figure 6. collector emitter capacitance vs. collector emitter voltage
BPW14N telefunken semiconductors rev. a2, 15-jul-96 4 (6) 02 4 6 12 0 2 8 14 94 8336 t / t turn on / turn off time ( s ) off i c collector current ( ma ) on 6 4 10 8 v ce =5v r l =100 =950nm t off t on figure 7. turn on/turn off time vs. collector current 400 600 1000 0 0.2 0.4 0.6 0.8 1.0 s ( ) relative spectral sensitivity rel wavelength ( nm ) 94 8337 800 figure 8. relative spectral sensitivity vs. wavelength 0.4 0.2 0 0.2 0.4 s relative sensitivity rel 0.6 94 8351 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 9. relative radiant sensitivity vs. angular displacement
BPW14N telefunken semiconductors rev. a2, 15-jul-96 5 (6) dimensions in mm 96 12180
BPW14N telefunken semiconductors rev. a2, 15-jul-96 6 (6) ozone depleting substances policy statement it is the policy of temic telefunken microelectronic gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. temic telefunken microelectronic gmbh semiconductor division has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. temic can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice . parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use temic products for any unintended or unauthorized application, the buyer shall indemnify temic against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. temic telefunken microelectronic gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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